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Nagata, Shinji*; Fujita, Haruka*; Inoue, Aichi; Yamamoto, Shunya; Tsuchiya, Bun*; Shikama, Tatsuo*
Nuclear Instruments and Methods in Physics Research B, 268(19), p.3151 - 3154, 2010/10
Times Cited Count：3 Percentile：28.78(Instruments & Instrumentation)A tungsten tri-oxide (WO
) film covered with a thin catalyst layer is one of the candidates for hydrogen sensing devices that show a reversible coloration under hydrogen exposure. While the injection of the cations and/or the formation of the oxygen vacancies can be responsible for the coloration of the film, the mechanism of the gasochromic phenomenon is not fully understood. In the present work, the changes of the optical properties in the WO film by ion irradiation were investigated to clarify the relation between the coloration and oxygen vacancies. WO films of 300-500 nm thicknesses were deposited on SiO
substrates by magnetron sputtering. Oxygen ions at energies between 200 and 800 keV were irradiated to the WO films. The optical absorption of the film was measured in the wavelengths between 190 and 1000 nm. The results show that the change of optical-absorption coefficient in WO films depends on both electronic and nuclear stopping powers.
Matsunami, Noriaki*; Fukushima, Junichi*; Sataka, Masao; Okayasu, Satoru; Sugai, Hiroyuki; Kakiuchida, Hiroshi*
Nuclear Instruments and Methods in Physics Research B, 268(19), p.3071 - 3075, 2010/10
Times Cited Count：13 Percentile：65.03(Instruments & Instrumentation)no abstracts in English
Hirata, Koichi*; Saito, Yuichi; Chiba, Atsuya; Yamada, Keisuke; Takahashi, Yasuyuki; Narumi, Kazumasa
Nuclear Instruments and Methods in Physics Research B, 268(19), p.2930 - 2932, 2010/10
Times Cited Count：3 Percentile：28.78(Instruments & Instrumentation)/Si by ion implantationNinakuchi, Yuki*; Saito, Masahiro*; Isshiki, Toshiyuki*; Nishio, Koji*; Nishiyama, Fumitaka*; Yamamoto, Shunya; Sasase, Masato*; Takahiro, Katsumi*
no journal, ,
In the course of Ag implantation into thermally grown SiO films, we found well-ordered Ag nanoparticles in the vicinity of SiO/Si interface. SiO films of 300 nm thick were grown on single crystalline Si(111) substrates. The SiO/Si samples were implanted with 350 keV-Ag ions to a fluence of 1
10
ions/cm
. The Ag-implanted SiO/Si samples were characterized by Rutherford backscattering spectrometry (RBS), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and cross sectional transmission electron microscopy (XTEM). The Ag concentration depth profiles obtained by RBS and XPS were non-Gaussian, indicating that Ag atoms diffused significantly. XTEM revealed that well-arranged Ag nanoparticles of 30 nm and 2 nm in diameter were distributed near the projected range and the SiO/Si interface, respectively.
